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WeEn Semiconductors
NXPLQSC106506Q
DIODE SIL CARB 650V 10A TO220AC
● ActiveRoHS: ROHS3 Compliant
On OrderROHS3 CompliantActive
CategorySingle Diodes
ECCNEAR99
Specifications
MfrWeEn Semiconductors
PackagingTube
Part StatusObsolete
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If1.85 V @ 10 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr230 µA @ 650 V
Capacitance @ Vr, F250pF @ 1V, 1MHz
Mounting TypeThrough Hole
Datasheets
NXPLQSC106506Q DatasheetPDFViewRequest Quote
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed