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Goford Semiconductor
G080N10T
MOSFET N-CH 100V 180A TO-220
● ActiveRoHS: RoHS Compliant
In StockRoHS CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time8 Weeks
Specifications
MfrGoford Semiconductor
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs107 nC @ 4.5 V
Vgs (Max)±20V
Datasheets
G080N10T DatasheetPDFView$3.0000
14 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
$3.0000
Volume Pricing
1+$3.0000
50+$1.4928
100+$1.3462
500+$1.0890
1000+$1.0063
2000+$0.9368
5000+$0.9175
Compliance & Regulatory
RoHS
RoHS Compliant
ECCN
EAR99
Lead Time
8 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed