正品保障
可追溯
担保交易
Cambridge GaN Devices
CGD65C055SP2
650V GAN HEMT, 55 MOHM, 27A, BHD
● ActiveRoHS: ROHS3 Compliant
现货ROHS3 Compliant量产中
分类Single FETs, MOSFETs
ECCNEAR99
交期26 Weeks
规格参数
MfrCambridge GaN Devices
SeriesP2
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C27A
Rds On (Max) @ Id, Vgs77mOhm @ 10A, 15V
Vgs(th) (Max) @ Id4.2V @ 10mA
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackageBHDFN-9-1
$12.6400
1,476 件现货
供应商报价 (1)
DigiKeyB授权
$12.6400
批量阶梯价
1+$12.6400
10+$8.8140
100+$7.6500
合规与法规信息
RoHS
ROHS3 Compliant
ECCN
EAR99
交期
26 Weeks
可追溯性
完整原厂追溯
正品保障
授权分销渠道
包装
原厂密封包装