正品保障
可追溯
担保交易
Cambridge GaN Devices
CGD65A055SH2
650V GAN HEMT, 55MOHM, DFN8X8. W
● ActiveRoHS: ROHS3 Compliant
现货ROHS3 Compliant量产中
分类Single FETs, MOSFETs
ECCNEAR99
交期26 Weeks
规格参数
MfrCambridge GaN Devices
SeriesICeGaN™ H2
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C27A
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs4 nC @ 12 V
$12.6000
3,024 件现货
供应商报价 (1)
DigiKeyB授权
$12.6000
批量阶梯价
1+$12.6000
10+$8.7850
100+$7.6194
合规与法规信息
RoHS
ROHS3 Compliant
ECCN
EAR99
交期
26 Weeks
可追溯性
完整原厂追溯
正品保障
授权分销渠道
包装
原厂密封包装