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Cambridge GaN Devices
CGD65A055SH2
650V GAN HEMT, 55MOHM, DFN8X8. W
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time26 Weeks
Specifications
MfrCambridge GaN Devices
SeriesICeGaN™ H2
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C27A
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs77mOhm @ 2.2A, 12V
Vgs(th) (Max) @ Id4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs4 nC @ 12 V
Datasheets
CGD65A055SH2 DatasheetPDFView$12.6000
3,024 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
$12.6000
Volume Pricing
1+$12.6000
10+$8.7850
100+$7.6194
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
26 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed