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ANBON SEMICONDUCTOR (INT'L) LIMITED
ASZM040120T
N-CHANNEL SILICON CARBIDE POWER
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time6 Weeks
Specifications
MfrANBON SEMICONDUCTOR (INT'L) LIMITED
PackagingBulk
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Rds On (Max) @ Id, Vgs32mOhm @ 40A, 20V
Vgs(th) (Max) @ Id3.6V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 18 V
Vgs (Max)+25V, -10V
Datasheets
ASZM040120T DatasheetPDFView$6.0500
37 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
$6.0500
Volume Pricing
1+$6.0500
15+$3.8040
105+$2.9041
510+$2.4349
1005+$2.3628
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
6 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed