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Cambridge GaN Devices
CGD65C025SP2
650V GAN HEMT, 25 MOHM, 60A, BHD
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time26 Weeks
Specifications
MfrCambridge GaN Devices
SeriesP2
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C60A
Rds On (Max) @ Id, Vgs35mOhm @ 20A, 15V
Vgs(th) (Max) @ Id4.2V @ 22mA
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackageBHDFN-9-1
Datasheets
CGD65C025SP2 DatasheetPDFView$24.9900
1,461 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
$24.9900
Volume Pricing
1+$24.9900
10+$18.3600
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
26 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed