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Cambridge GaN Devices
CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.
● ActiveRoHS: ROHS3 Compliant
In StockROHS3 CompliantActive
CategorySingle FETs, MOSFETs
ECCNEAR99
Lead Time26 Weeks
Specifications
MfrCambridge GaN Devices
SeriesICeGaN™
PackagingTape & Reel (TR) || Cut Tape (CT) || Digi-Reel®
Part StatusActive
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Rds On (Max) @ Id, Vgs280mOhm @ 600mA, 12V
Vgs(th) (Max) @ Id4.2V @ 2.75mA
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 12 V
Vgs (Max)+20V, -1V
Datasheets
CGD65B200S2-T13 DatasheetPDFView$6.6043
4,139 pcs in stock
Supplier Offers (1)
DigiKeyBAuthorized
$6.6043
Volume Pricing
1+$6.6043
10+$4.4056
100+$3.1607
500+$3.0729
Compliance & Regulatory
RoHS
ROHS3 Compliant
ECCN
EAR99
Lead Time
26 Weeks
Traceability
Full manufacturer traceability
Genuine Guarantee
Authorized distribution channels
Packaging
Original factory sealed